Q4 and 2007 Earnings Highlights
TriQuint posted record earnings for 2007, exceeding $475 million dollars. We achieved revenue gains across all of our markets and improved gross margin dollars by 22% to $151.3 million. Earnings were just above our previous guidance, with GAAP net income growing 8% to $0.16 per diluted share. Listen to the financial analyst call discussing highlights. |
TriQuint Announces Intention to Acquire WJ Communications
The definitive agreement was announced March 10 and is expected to close within 90 days. WJ, a leading supplier of radio frequency (RF) solutions for wireless infrastructure, will further TriQuint's reach into the base station market. It will provide TriQuint with a Silicon Valley-based design center and will accelerate the evolution to multi-function modules for infrastructure applications. |
Strategy Analytics Reports on TriQuint
The research firm released two Insight reports on TriQuint. The first "TriQuint Furthers Innovation in 2008 with New Foundry Processes" outlines TriQuint's processes including TQBiHEMT and TQP13N as well as the markets these processes serve. The second report entitled "TriQuint Expands Standard Portfolio with WJ Acquisition" analyzes the acquisition concluding "TriQuint has made a smart move with the acquisition of WJ, and should reap benefits quickly." |
 Foundry
TriQuint and AWR Team-Up on New Customer Incentive Program- Jump Start
Project Jumpstart introduces wireless start-up companies to the benefits of designing with Gallium Arsenide with a low-cost design and prototyping package. The offer, available to new customers of TriQuint and AWR, includes a reduced rate TriQuint TQPED PDQ run and a 90-day free lease of AWR's Microwave Office and Visual System Simulator software products. Please contact foundryinfo@tqs.com for more information.
New Process Technology Overview
TriQuint has recently introduced two new foundry processes including:
- TQBiHEMT - A combination of TriQuint's InGaP HBT process and InGaAs E/D pHEMT process. TQBiHEMT enables the integration of high power amplifiers in HBT on the same die as pHEMT low noise amplifiers and pHEMT switches. The process is fabricated on 150-mm (6-inch) wafers.
- TQP13N - The process incorporates a highly repeatable optically defined 0.13µm self-aligned gate pHEMT FET using a highly reliable refractory gate metal system, coupled with high density capacitors, epitaxial and nichrome resistors, and two layers of gold interconnect. The use of optically-defined gates greatly reduces the cost of production relative to similar processes based on E-beam gate lithography. The process is fabricated on 150mm (6-inch) wafer.
Sign-up for GaAs Class July 22-24
TriQuint will host its annual three day GaAS class July 22-24, 2008 at our Hillsboro, OR plant. The class is designed for engineers with basic RF knowledge interested in learning more about TriQunt's TQPED and TQHBT3 processes. This class is a great resource for new customers planning to implement designs with TriQuint processes. More info... |
 Networks
TriQuint Ships Breakthrough Wireless MIMO Modules to Major Chip ManufacturerTriQuint is a key supplier of dual-band WiFi front-end modules (FEMs) used by a major chip manufacturer. The single-chip modules support the customer's next-generation multiple-input, multiple-output (MIMO) 802.11a, b, g WiFi systems. In MIMO, three modules are used in parallel in the RF front end, creating three receive and transmit '3x3' signal paths instead of one. This is similar to opening extra lanes on a freeway for drivers: more 'lanes' equals a faster commute. More info...
 LDMOS RF Transistors for Base Stations, Avionics and Radar A broad portfolio of RF power transistors marketed previously by Peak Devices (acquired by TriQuint in August 2007) based on laterally diffused metal oxide semiconductor (LDMOS) technology is now available worldwide. The transistors are ideally suited for base station and multichannel multipoint distribution service (MMDS) in high-performance, cost-competitive applications. This portfolio also offers LDMOS for avionics and radar applications. More info...
 TriQuint's New Cable Modem Filter Doubles Available Bandwidth for DOCSIS® 3.0TriQuint's newest filter for high-speed wideband cable television digital tuner applications, designed using a newly developed proprietary technique, enables CATV tuner, baseband and set-top box (STB)manufacturers to build smaller, high performance DOCSIS® 3.0-based high-speed cable modems. Modems can be optimized for faster data transfer for video-on-demand (VOD) and other advanced services. TriQuint believes the filter is a 'first' since previous application-specific filters at the same center frequency offered only half the fractional bandwidth. TriQuint worked closely with cable industry leaders, including Microtune®, Inc. and BroadLogic. More info...
 TriQuint Introduces New Ultra Low Loss, High Rejection GPS Filter
TriQuint's new surface acoustic wave (SAW) filter for global positioning satellite (GPS) navigation systems boasts ultra low loss with extraordinary rejection. It complements TriQuint's extensive filter portfolio for GPS receivers, which allowed TriQuint to supply 66% of the SAW filters used world-wide in 2007, including shipments to three of the top four GPS manufacturers. More info... |
 Handsets
GSMA Mobile Congress was February 11-14, 2008 in Barcelona, Spain. TriQuint made several product announcements leading up to and at the show with solutions for Ultra Low Cost handsets to the latest in 3G development. Those product announcements include:
ULC Solutions
 The TQM6M4028U: A QUANTUM Tx Module ™ with a 6x6mm footprint for the GSM850 and PCS1900 bands. The TQM6M4028U is tested an pre-qualified for use with three leading single-chip baseband/transceiver manufacturers.
 The TQM613027: A TRITIUM II PA-Duplexer Module™ with a 7x4mm footprint for use in low-cost CDMA cellular-band handsets for emerging markets. The TQM613027 is a drop in replacement for the TQM613025, the first high-efficiency PA-Duplexer module used in low-cost CDMA cellular-band handsets for emerging markets with improved RF performance and minimized battery consumption.
WEDGE Solutions
 The TQM7M5012: A HADRON II PA Module™ with a 5x5mm footprint for EDGE-Polar and aligned with Qualcomm's newest 3G multimode transceivers*. Compared to the previous generation, TQM7M5012 offers even lower Rx band noise power level to help eliminate external components in the radio.
 The TQM7M5005: A HADRON II PA Module™ with a 5x5 footprint for EDGE-Linear. The TQM7M5005 is designed to work with some of the worlds leading 2.5G and 3G transceivers that require a linear power amplifier.
Both HADRON II PA Modules™ are 50% smaller than the previous generation achieved by design using TriQuint's CuFlip™ copper bump technology.
3G Solutions
The TQM676021, TQM666022 and TQM616025: TRITIUM III PA-Duplexer Modules™ which include a power amplifier, duplexer, and Tx interstage filter and a coupler / detector with 7x4mm footprint, 30 percent smaller than previous designs. The modules are high data-rate HSUPA compliant and support Band 1, Band 2 and Bands 5/6 respectively. The high-efficiency architecture is optimized to reduce battery consumption, increasing the time between charges.
 The TQM6M9008: A QUANTUM II Tx Module™ which combines a GSM/EDGE power amplifier, WEDGE Antenna Switch, filtering and CMOS controller into one highly integrated 7x7.5mm module. The TQM6M9008 does not require customization when used on common platform regardless of the form factor including traditional, flips and sliders. It helps reduce the number of dropped calls by exceeding the network operator's stringent Total Radiated Power (TRP) requirements.
These TRITIUM III PA-Duplexer Modules ™ and QUANTUM II Tx Module™ are aligned with Infineon's SMARTi ™ UE transceivers*.
*Other names property of respective companies. |
 Military
TriQuint Places Largest GaN Wafer Order in IQE Plc History
TriQuint has placed the largest commercial gallium nitride (GaN) wafer order in the history of IQE Plc to support ongoing development efforts and the roll-out of new military and commercial products. Since being awarded a multi-year GaN research development contract in excess of $30 million by the Defense Advanced Research Projects Agency (DARPA) in 2005, TriQuint has made significant discoveries relating to new gallium nitride-based amplifiers. Delivery of the wafers is scheduled throughout 2008 to support upcoming GaN product announcements. More info...
TriQuint Presents Papers on GaN, HV pHEMT & Packaging at GOMACTech 2008
TriQuint presented papers at this year's GOMACTech Conference, highlighting gallium nitride advances as well as high voltage pHEMT GaAs technology for military applications. Another paper by TriQuint researchers explored the applicability of commercial packaging techniques for gallium arsenide (GaAs) MMICs (monolithic microwave integrated circuits) that can offer practical and more affordable alternatives for military system designers. More info... | |
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Product Guide 
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MANTECH 
Compound Semiconductor is where professionals come together and discuss industry trends and technology development, as well as network with industry colleagues. More than two dozen TriQuint's technologists participated on panels, as invited guests and in technical paper presentations. Click here for technical papers.
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IEEE MTT-S
June 15-20, 2008 Atlanta, Georgia, USA
Visit TriQuint at Booth #1027. Learn about our newest high-performance GaAs processes for wireless applications. See TriQuint's leading GaAs, LDMOS, SAW, & BAW RF products for wireless infrastructure, optical PLD, broadband, GPS and military applications (DC-100 GHz). Staff will be on-hand to discuss Peak Devices and WJ Communications products. |
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Contacts
OREGON
+1-503-615-9000
FLORIDA
+1-407-886-8860
EUROPE
+49-89-99628-2600
CHINA
+86-21-6886-3569
JAPAN
+81-03-5549-7105
TAIWAN
+866-2-2758-3066
KOREA
+82-2-368-2104
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